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Integrated Circuit Key Solutions
BUK755R4-100E127

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BUK755R4-100E127

Manufacturer
Philips
Manufacturer Product Number
BUK755R4-100E127
Description
N-CHANNEL POWER MOSFET
Product Status
Active
Detailed Description
N-Channel 100 V 120A (Tc) 349W (Tc) Through Hole TO-220AB
Datasheet
BUK755R4-100E127 Datasheet
EDA/CAD Models
BUK755R4-100E127 Models

Product Attributes

Mfr Philips
Series Automotive, AEC-Q101, TrenchMOS™
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 180 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11810 pF @ 25 V
FET Feature -
Power Dissipation (Max) 349W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-220AB
Package / Case TO-220-3
Description Shipping Reviews (2)

N-Channel 100 V 120A (Tc) 349W (Tc) Through Hole TO-220AB

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