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Integrated Circuit Key Solutions
SIHG052N60EF-GE3

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SIHG052N60EF-GE3

Manufacturer
Vishay Siliconix
Manufacturer Product Number
SIHG052N60EF-GE3
Description
MOSFET N-CH 600V 48A TO247AC
Product Status
Active
Detailed Description
N-Channel 600 V 48A (Tc) 278W (Tc) Through Hole TO-247AC
Datasheet
SIHG052N60EF-GE3 Datasheet
EDA/CAD Models
SIHG052N60EF-GE3 Models

Product Attributes

Base Product Number SIHG052
Current - Continuous Drain (Id) @ 25°C 48A (Tc)
Drain to Source Voltage (Vdss) 600 V
Drive Voltage (Max Rds On, Min Rds On) 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 101 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 3380 pF @ 100 V
Mfr Vishay Siliconix
Mounting Type Through Hole
Operating Temperature -55°C ~ 150°C (TJ)
Package Tube
Package / Case TO-247-3
Power Dissipation (Max) 278W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 52mOhm @ 23A, 10V
Series EF
Supplier Device Package TO-247AC
Technology MOSFET (Metal Oxide)
Vgs (Max) ±30V
Vgs(th) (Max) @ Id 5V @ 250µA
Description Shipping Reviews (2)

N-Channel 600 V 48A (Tc) 278W (Tc) Through Hole TO-247AC

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