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Integrated Circuit Key Solutions
SISS32LDN-T1-GE3

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SISS32LDN-T1-GE3

Manufacturer
Vishay Siliconix
Manufacturer Product Number
SISS32LDN-T1-GE3
Description
MOSFET N-CH 80V 17.4A/63A PPAK
Product Status
Active
Detailed Description
N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8SH
Datasheet
SISS32LDN-T1-GE3 Datasheet
EDA/CAD Models
SISS32LDN-T1-GE3 Models

Product Attributes

Base Product Number SISS32
Current - Continuous Drain (Id) @ 25°C 17.4A (Ta), 63A (Tc)
Drain to Source Voltage (Vdss) 80 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds 2550 pF @ 40 V
Mfr Vishay Siliconix
Mounting Type Surface Mount
Operating Temperature -55°C ~ 150°C (TJ)
Package Tape & Reel (TR), Cut Tape (CT), Digi-Reel®
Package / Case PowerPAK® 1212-8SH
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Product Status Active
Rds On (Max) @ Id, Vgs 7.2mOhm @ 15A, 10V
Series TrenchFET® Gen IV
Supplier Device Package PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Vgs (Max) ±20V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Description Shipping Reviews (2)

N-Channel 80 V 17.4A (Ta), 63A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8SH

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